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| Study on Measuring Method of Optical Characteristics of Photoresist by Spectroscopic Ellipsometry |
| LIU Wen-de1,CHEN Chi1,CHEN Xi2,YU Jing1,ZHENG Chun-di1,WANG Yu1 |
1.National Institute of Metrology,Beijing 100013, China
2.Laboratory of Nano-Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083, China |
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Abstract By means of phase-modulated ellipsometer,the method for measuring optical constants of photoresist is described.The test scheme and instrument parameters for testing process of photoresist are optimized.For commonly used positive S9912 photoresist,the optical constants for 275~650 nm before/after the exposure are measured,and the dynamic ellipsometry is used to obtain the values before the exposure at wavelengths of interest.The experimental results indicate:the method provided is applicable for the research of photoresist in UV-VIS-NIR spectral range and may find important application in the optical lithography simulation,the development and characterization of new-type photoresist materials.
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［1］蓝闽波,等,纳米材料测试技术［M］.上海:华东理工大学出版社,2009,163-177.
［2］Zaidi S H,Rrueck S R.High aspect-ratio holographic photoresist gratings［J］.Applied Optics,1988,27(14):2999-3002.
［3］Schattenburg M L, Aucoin R J, et al.Optically matched trilevel resist process for nanostructure fabrication［J］.Journal of Vacuum Science & Technology B,1995,13(6):3007-3011.
［4］Carvalho E J, Alves M A R, Braga E S, et al. SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si［J］.Microelectronics Journal,2006,37(11):1265-1270.
［5］Chen X, Fan Z C, Zhang J, et al. Pseudo-Rhombus-Shaped Subwavelength Crossed Gratings of GaAs for Broadband Antireflection［J］.Chinese Physics Letters,2010,27(12):99-101.
［6］罗志勇.质量自然基准的研究进展及发展方向［J］.计量学报,2004,25(2):138-141. |
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2011, Vol. 32 
