|
|
The Research on Method for Evaluating the Switching Error in Electrical Thermal Resistance Test |
LI Hao,LIU Yan,ZHAI Yu-wei,DING Chen,DING Li-qiang,WU Ai-hua |
The 13th Research Institute, CETC, Shijiazhuang,Hebei 050051, China |
|
|
Abstract During the semiconductor device electrical method thermal resistance testing process, the error caused by current switching is an important factor affecting the accuracy of measurement, which could not be evaluated effectively now.On the basis of error principle analysis, a double-chip circuit was designed to avoid current switching, and a junction temperature reference value without switching error was obtained, achieving effective evaluation of instrument testing results. The results show that this method can quantitatively evaluate the switching process error of thermal resistance testers, and has good practical significance in measuring thermal resistance testers.
|
Received: 06 January 2022
Published: 17 July 2023
|
|
|
|
|
[2] |
彭浩, 茹志芹, 张瑞霞, 等. 半导体器件结到壳热阻测试研究 [J]. 电子工艺技术, 2016, 37 (3): 171-174.
|
[10] |
任建平, 孙建平, 李婷, 等. 标准铂电阻温度计自热效应对测量结果的影响 [J]. 计量学报, 2021, 42 (5): 589-594.
|
[14] |
漆琴. 功率型LED结温检测与ANSYS仿真分析 [D]. 杭州:杭州电子科技大学, 2014.
|
[1] |
李汝冠, 廖雪阳, 尧彬, 等. GaN基HEMTs器件热测试技术与应用进展 [J]. 电子元件与材料, 2017, 36 (9): 1-9.
|
|
Yu M C, Li X N. A little current K-factor method for measuring junction temperature of aviation lighting power LED [J]. Optical Technique, 2012, 38 (3): 371-375.
|
[4] |
Keppens A, Ryckaert W R, Deconinck G, et al. High power light-emitting diode junction temperature determination from current-voltage characteristics [J]. Journal of Applied Physics, 2008, 104 (9):33-40.
|
[6] |
温怀疆, 牟同升. 脉冲法测量LED结温、热容的研究 [J]. 光电工程, 2010, 37 (7): 53-59.
|
[7] |
郭春生, 王琳, 翟玉卫, 等. 瞬态大电流测量结温中校温曲线弯曲现象的研究 [J]. 物理学报, 2015, 64 (18): 184704.
|
[8] |
李霁红, 贾颖, 康锐, 等. 双极晶体管ΔVbe瞬态热阻测试法精度修正 [J]. 半导体学报, 2005, 26 (5): 1010-1014.
|
|
Li R G, Liao X Y, Yao B, et al. Progress of technologies and applications of temperature measurements for GaN-based HEMTs [J]. Electronic Components and Materials, 2017, 36 (9): 1-9.
|
|
Peng H, Ru Z Q, Zhang R X, et al. Development of test method for junction to case thermal resistance of semiconductor devices [J]. Electronics Process Technology, 2016, 37 (3): 171-174.
|
[3] |
于孟诚, 李湘宁. 航空照明功率型LED结温的小电流K系数测量法 [J]. 光学技术, 2012, 38 (3): 371-375.
|
[5] |
Kuball M, Riedel G J, Pomeroy J W, et al. Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy [J]. Electron Device Letters, IEEE, 2012, 28 (2):86-89.
|
|
Wen H J, Mou T S. The measurement of LED junction temperature and thermal capacity using pulse current [J]. Opto-electronic Engineering, 2010, 37 (7): 53-59.
|
|
Guo C S, Wang L, Zhai Y W, et al. Bending phenomenon of temperature calibration curve in junction temperature measurement by the high transiet current [J]. Acta Phys Sin ,2015,64 (18): 184704.
|
|
Li J H, Jia Y, Kang R, et al. Accuracy correction of transient thermal resistance test of bipolar transistors via method of ΔVbe [J]. Chinese journal of semiconductors, 2005, 26 (5): 1010-1014.
|
[9] |
翟玉卫, 郑世棋, 程晓辉, 等. 电学法热阻测试仪校准方法研究 [J]. 计算机与数字工程, 2015, 43 (1): 1-4.
|
[11] |
Ballico M J, Sukkar D. Temperature dependence of IPRT and SPRT self-heating: does working with W really help [J]. International Journal of Thermophysics, 2014, 35 (6):1067-1076.
|
[12] |
韩伟, 刘岩, 杜蕾, 等. 发射率对半导体器件显微红外测温结果的影响 [J]. 计量学报, 2021, 42 (1): 35-40.
|
[13] |
翟玉卫,梁法国,郑世棋,等. 用结构函数法测量GaN HEMT与夹具的界面层热阻 [J]. 中国测试,2018,44 (1): 31-34.
|
[15] |
胡振邦. 脉冲注入式功率型LED热特性测量系统研制 [D]. 厦门:厦门大学, 2014.
|
|
Fang W L, Shi C Y, Sun X J, et al. Measuring method of loaded speed rate based on data fitting [J]. Acta Metrologica Sinica, 2004, 25 (3): 244-246.
|
|
Zhai Y W, Zheng S Q, Cheng X H, et al. Calibration method of thermal resistance tester based on electrical method [J]. Computer & Digital Engineering, 2015, 43 (1): 1-4.
|
|
Reng J P, Sun J P, Li P, et al. Influence of self-heating effect of standard platinum resistance thermometer on measurement results [J]. Acta Metrologica Sinica, 2021, 42 (5): 589-594.
|
[16] |
方伟林, 施昌彦, 孙晓军, 等. 基于数据拟合的加荷速率测量算法 [J]. 计量学报, 2004,25 (3): 244-246.
|
|
Han W, Liu Y, Du L, et al. Influence of emissivity of infrared thermal results of semiconductor device [J]. Acta Metrologica Sinica, 2021, 42 (1): 35-40.
|
|
Zhai Y W, Liang F G, Zheng S Q, et al. Measurement of interface layer thermal resistance between GaN HEMT and fixure by structure function method [J]. China Measurement & Test, 2018, 44 (1): 31-34.
|
|
|
|