基于多层膜沉积的循迹式线宽标准样片

doi:10.3969/j.issn.1000-1158.2022.12.04

Abstract
Figure/Table
References (16)
Related Citation (15)

Download: PDF (1904 KB) HTML (1 KB)
Export: BibTeX | EndNote (RIS)

Abstract In order to realize the calibration of critical dimension measuring instruments in the semiconductor industry, research work on nano-size line width standard samples has been launched.The nano-size line width standard samples with sizes of 20nm and 50nm were prepared by multi-layer film deposition technology.Aiming at the problem that it is difficult to find out when calibrating due to the small overall size of the standard template and the small measuring field of view of the instrument, and the problem that the quality of the template line edge leads to too large difference in the results of different positions measured each time, the positioning and tracking signs were designed. A total of 9 groups of signs were designed, each group of signs had 9 marker grids, the width of each sign was 0.5μm, and the interval of the signs was 2.5μm, the distance between each group of marks was 100μm.The semiconductor process can quickly and accurately find the standard measurement position, ensure the repeatability of each measurement result, and effectively improve the measurement speed and accuracy.

Key words： metrology line width standard critical dimension multi-layer film deposition tracking mark

Received: 25 November 2021 Published: 28 December 2022

PACS:

TB921

	Service

	E-mail this article
	Add to my bookshelf
	Add to citation manager
	E-mail Alert
	RSS
	Articles by authors
	ZHAO Lin
	HAN Zhi-guo
	ZHANG Xiao-dong
	XU Xiao-qing
	LI Suo-yin
	WU Ai-hua

Cite this article:

ZHAO Lin,HAN Zhi-guo,ZHANG Xiao-dong, et al. Tracking Type Line Width Standard Sample Based on Multilayer Film Deposition[J]. Acta Metrologica Sinica, 2022, 43(12): 1549-1553.

URL:

http://jlxb.china-csm.org:81/Jwk_jlxb/EN/10.3969/j.issn.1000-1158.2022.12.04 OR http://jlxb.china-csm.org:81/Jwk_jlxb/EN/Y2022/V43/I12/1549

［1］冯亚林, 张蜀平. 集成电路的现状及其发展趋势［J］. 微电子学, 2006 (2): 51-54.
Feng Y L, Zhang S P. Current Status and Development Trend of Integrated Circuits ［J］. Microelectronics, 2006 (2): 51-54.
［2］周辉, 杨海峰. 光刻与微纳制造技术的研究现状以及发展［J］. 微纳电子技术, 2012 (9): 13-15.
Zhou H, Yang H F. Research status and development of lithography and micro-nano manufacturing technology ［J］. Micro-nanoelectronic technology, 2012 (9): 13-15.
［3］Semiconductor Industry Association. 2009 International Technology Roadmap for Semiconductors［Z］. 2013.
［4］Potzick J E, Nunn J W. International comparison of photomask linewidth standards: United States (NIST) and United Kingdom (NPL) ［J］. Proceedings of SPIE-The International Society for Optical Engineering, 1996, 2725: 124-129.
［5］Dai G L, Harm K, Bosse H, et al. Comparison of line width calibration using critical dimension atomic force microscopes between PTB and NIST［J］. Measurement Science and Technology 2017, 28(6): 65010-12.
［6］VLSI Standards Incorporated. Nanolattice pitch standard NLSM users manual［S］. 2012: 12-1.
［7］方仲平, 杜贤和. 线宽标准的研究［J］. 计量学报, 1989, 10 (3): 163-169.
Fang Z P, Du X H. Research on Line Width Standard ［J］. Acta Metrologica Sinica, 1989, 10 (3): 163-169.
［8］李源, 雷李华, 高婧, 等. 纳米尺度标准样片光学表征方法的研究［J］. 微纳电子技术, 2012, 49 (6): 406-412.
Li Y, Lei L H, Gao J, et al. Research on the Optical Characterization Method of Nanoscale Standard Samples ［J］. Micro-Nanoelectronic Technology, 2012, 49 (6): 406-412.
［9］许晓青, 李锁印, 赵琳, 等. 纳米线距标准样片的研制和表征［J］. 微纳电子技术,2019, 56 (9): 754-760.
Xu X Q, Li S Y, Zhao L, et al. Development and characterization of nanowire pitch standard samples ［J］. Micro-Nanoelectronic Technology, 2019, 56 (9): 754-760.
［10］吴子若, 蔡燕妮, 王星睿, 等. 基于多层膜光栅的AFM探针结构表征研究［J］. 红外与激光工程, 2020, 49 (2): 0213001-1~0213001-6.
Wu Z R, Cai Y N, Wang X R, et al. Research on AFM Probe Structure Characterization Based on Multilayer Film Grating ［J］. Infrared and laser engineering, 2020, 49 (2): 0213001-6.
［11］褚魏, 赵学增, 肖增文, 等. 纳米尺度线宽测量技术的研究［J］. 东北电力学院学报, 2004, 30 (8): 5-7.
Chu W, Zhao X Z, Xiao Z W, et al. Research on nanometer-scale linewidth measurement technology ［J］. Journal of Northeast Electric Power University, 2004, 30 (8): 5-7.
［12］Takenaka H, Hatay A M, Ito H, et al. Development of Si/SiO2 multilayer type AFM tip characterizers ［J］. Jaurnal of Surface Analysis, 2010, 17 (3): 264-268.
［13］陈俊, 王学毅, 谭琦, 等. 键合SOI材料应力的控制技术［J］. 微纳电子技术, 2017, 54 (5): 304-310.
Chen J, Wang X Y, Tan Q, et al. Bonding SOI material stress control technology ［J］. Micro-Nanoelectronic Technology, 2017, 54 (5): 304-310.
［14］蒋庄德, 王琛英, 杨树明. 典型纳米结构制备及其测量表征［J］. 中国工程科学, 2013, 15 (1): 15-20.
Jiang Z D, Wang C Y, Yang S M. Preparation and measurement and characterization of typical nanostructures ［J］. China Engineering Science, 2013, 15 (1): 15-20.
［15］刘俭, 谷康, 李梦周, 等. 扫描探针显微镜下微纳结构深度测量的校准方法［J］. 计量学报, 2019, 40 (4): 549-556.
Liu J, Gu K, Li M Z, et al. Calibration Method for Depth Measurement of Nano/microstructure in Scanning Probe Microscopy ［J］. Acta Metrologica Sinica, 2019, 40 (4): 549-556.
［16］尹传祥, 高思田, 赵贤云, 等. 计量型紫外显微镜微纳米线宽测量技术的研究［J］. 计量学报, 2015, 36 (6): 575-578.
Yin C X,Gao S T,Zhao X Y, et al.The Research of Micro-Nano Linewidth Measurement Technology on Metrological Ultraviolet Microscope ［J］. Acta Metrologica Sinica, 2015, 36 (6): 575-578.
［17］张晓东, 赵琳, 韩志国, 等. 基于图像处理的线距测量方法［J］. 激光与光电子学进展, 2020, 57 (1): 011201.
Zhang X D, Zhao L, Han Z G, et al. Line distance measurement method based on image processing ［J］. Progress in Laser and Optoelectronics, 2020, 57 (1): 011201.
［18］李琪, 李伟, 施玉书, 等. 248nm紫外显微镜微纳线宽校准方法的研究［J］. 计量学报, 2015, 36 (1): 6-9.
Li Q, Li W, Shi Y S, et al. The Research of Nanometer Linewidth Calibration Method Used by 248nm Ultraviolet Microscope ［J］. Acta Metrologica Sinica, 2015, 36 (1): 6-9.