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| Position Drift Compensation Method for Thermoreflectance Microscopy |
| LIU Yan,ZHAI Yu-wei,DING Chen,QIAO Yu-e,JING Xiao-dong,WU Ai-hua |
| The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, Hebei 050051, China |
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Abstract Multiple images are acquired during the procedure of thermoreflectance microscopy, each pixel of the image should be bound to a fixed position of the object's surface throughout the procedure.Nevertheless, drifting of the object is inevitable, thus jeopardizing accuracy of the measurement.A sub-pixel image registration algorithm is put forward to estimate the drift, and the result is feed into a PID algorithm controlling a piezo nanopositioner to compensate for the position drift, so the real-time position drift correction is carried out.Experiments verify the performance of the algorithm and the effect of drift correction, the residual error of displacement correction is within 5nm, and errors introduced by position drift are well suppressed compared to uncompensated measurement, the test accuracy of thermoreflectance microscopy is improved.
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Received: 09 February 2022
Published: 19 September 2022
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［1］蔡涛, 段善旭, 康勇. 半导体器件热特性的光学测量技术及其研究进展 ［J］. 激光与光电子学进展, 2008, 45 (6):51-58.
Cai T, Duan S X, Kang Y. Progress in optical techniques for measuring thermal properties of semiconductor devices ［J］. Laser & Optoelectronics Progress, 2008, 45 (6): 51-58.
［2］Farzaneh M, Maize K, Lüerβen D, et al. CCD-based thermoreflectance microscopy: Principles and applications ［J］. Journal of Physics, 2009, 42 (14): 1-20.
［3］李汝冠, 廖雪阳, 尧彬, 等. GaN基HEMTs 器件热测试技术与应用进展 ［J］. 电子元件与材料, 2017, 36 (9):1-9.
Li R G, Liao X Y, Yao B, et al. Progress of technologies and applications of temperature measurements for GaN-based HEMTs ［J］. Electronic Components and Materials, 2017, 36 (9): 1-9.
［4］Maize K, Heller E, Shakouri A,et al. Fast transient thermoreflectance CCD imaging of pulsed self-heating in AlGaN/GaN power transistors ［C］//Proceedings of IEEE International Reliability Physics Symposium. Anaheim, CA, USA, 2013.
［5］Maize K, Pavlidis G, Heller E, et al. High resolution and thermal characterization and simulation of power AlGaN/GaN HEMTs using micro-Raman thermography and 800 picosecond transient thermoreflectance imaging ［C］// Proceedings of Compound Semiconductor Integrated Circuit Symposium. La Jolla, CA,USA, 2014.
［6］Burzo M G, Komarov P L, Raad P E. Noncontact transient temperature mapping of active electronic devices using the thermoreflectancemethod ［J］. IEEE Trans Compon Packag Technol, 2005, 28(4): 637-643.
［7］Pavlidis G, Yates L, Kendig D, et al. Thermal Performance of GaN/Si HEMTs Using Near-Bandgap Thermoreflectance Imaging ［J］. IEEE Transactions on Electron Devices, 2020, 67 (3):822-827.
［8］Helou E A, Cui Y B, Tadjer M, et al. High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates ［J］. IEEE Transactions on Electron Devices, 2020, 67(12): 5415-5420.
［9］Kumar N, Vaca D, Joishi C, et al. Ultrafast Thermoreflectance Imaging and Electrothermal Modeling of β-Ga2O3 MESFETs［J］. IEEE Electron Device Letters, 2020, 41 (4);641-644.
［10］Metayrek Y, Kociniewski T, Khatir Z. Thermal behaviour evolution of an IGBT module after aging measured by thermoreflectance ［J］. Microelectronics Reliability, 2020, 114:113843.
［11］Jha A K, Li C, Pipe K P, et al. Measurement of facet optical absorption in high power diode lasers using thermoreflectance［C］//2019 IEEE High Power Diode Lasers and Systems Conference (HPD). Coventry, United Kingdom, 2019.
［12］翟玉卫,梁法国,郑世棋 等. 用热反射测温技术测量GaN HEMT的瞬态温度 ［J］. 半导体技术, 2016(1): 76-80.
Zhai Y W, Liang F G, Zheng S Q, et al. Transient Temperature Measurement of GaN HEMT Using Thermoreflectance Technique ［J］. Semiconductor Technology, 2016(1): 76-80.
［13］Shakouri A, Ziabari A, Kendig D, et al. Stable Thermoreflectance Thermal Imaging Microscopy with Piezoelectric Position Control［C］//32nd SEMI-THERM Symposium. Santa Clara, CA, USA,2016.
［14］Kendig D, Hohensee G, Pek E, et al. Accurate Thermoreflectance Imaging of Nano-Features Using Thermal Decay ［C］// IEEE ITHERM Conference.Orlando, FL, USA, 2017. |
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2022, Vol. 43 
