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| Key Comparison CCQM-K32 for Thickness Measurement of Ultrathin Silicon Oxides on Silicon Wafer |
| WANG Hai1,LIU Fen2,KAN Ying1,SONG Xiao-ping1,ZHAO Liang-zhong2,QIU Li-mei2 |
1. National Institute of Metrology, Beijing 100013, China;
2. Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China |
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Abstract Based on X-ray photoelectron spectroscopy technique, the National Institute of Metrology (NIM) of China developed an accurate analytical method and participated in the CCQM-32 international key comparison on thickness (less than 10 nm) measurement of ultrathin silicon oxides on silicon wafer.According to the published results of CCQM-K32, the NIM results with the expanded uncertainty of 4.6％～7.0% are agreed with the key comparison reference values and the degree of equivalence is gained.
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2013, Vol. 34 
