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| The Influence of Temperature on Interlayer Coupling of Stacking Bilayer Graphene |
| SHENG Xiang-yong1,2,REN Ling-ling2,YAO Ya-xuan2,YU Sheng-wang1 |
1. Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan, Shanxi 030024, China
2. National Institute of Metrology, Beijing 100029, China |
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Abstract Interlayer coupling of stacking graphene and chemical vapor deposition grown (CVD-grown) graphene with different layers was analyzed using Raman spectroscopy at room temperature. Then bilayer graphene prepared by random stacking and CVD-grown were selected to study the influence of temperature on interlayer coupling. The results showed that the interlayer coupling between stacking bilayer graphene and CVD-grown bilayer graphene were different, there is none or weak coupled interaction in stacking bilayer graphene while CVD-grown bilayer graphene has stronger coupled interaction between layers. For G peak frequency, stacking bilayer graphene exhibits a lower value of thermal coefficient compared to CVD-grown bilayer graphene when the temperature increased from 25 ℃ to 250 ℃. When the temperature was higher than 250 ℃, a positive value of thermal coefficient of stacking bilayer graphene was observed, which indicated the occurrence of coupled interaction between the layers. Additionally, similar trends were observed for full width at half-maximum of the 2D peak and the intensity ratios of G and 2D peaks (IG/I2D) of these two materials over the temperature range of 25 ℃ to 400 ℃. Moreover, stacking bilayer graphene is more sensitive to temperature change compared to CVD-grown bilayer graphene.
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Received: 11 January 2017
Published: 06 November 2018
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2018, Vol. 39 
